Abstract
A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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