Author:
Liu Zhensheng,Carlberg Torbjörn
Abstract
Oxygen incorporation in silicon crystals during Czochralski growth is dependent on many factors, of which the dissolution of the silica crucible is of great importance. In this paper the reactions between vitreous silica and molten silicon have been analyzed, both in sealed ampoules and in Czochralski crucibles. It was found that the vitreous silica crystallizes to cristobalite by lateral growth. For this reaction to occur it is necessary that liquid silicon is present. The vitreous silica dissolves and the cristobalite grows with a thin layer of liquid silicon between them. Different oxygen concentrations in the melt in equilibrium with the amorphous and crystallized silica are necessary for the reaction to proceed. The oxygen flux in the melt is dependent upon the dissolution of both vitreous silica and cristobalite as well as the reaction between these phases.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Dynamic Oxygen Equilibrium in Silicon Melts during Crystal Growth by the Czochralski Technique
2. 6. Liu Z. and Carlberg T. , submitted to J. Electrochem. Soc.
3. 1. Moody J. W. , in Semiconductor Silicon 1986, edited by Huff H. R. , Abe T. , and Kolbesen B. (The Electrochem. Soc, PV 86–4, 1986).
4. The dissolution of fused silica in molten silicon
Cited by
21 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献