Structural properties of epitaxial TiO2 films grown on sapphire (11$\overline 1$0) by MOCVD

Abstract

Titanium dioxide thin films were grown on sapphire (11$\overline 1$0) substrates in a low-pressure metal-organic chemical vapor deposition system at temperatures ranging from 400 to 800 °C. Raman scattering, x-ray diffraction, transmission electron microscopy, and high resolution electron microscopy techniques were employed to characterize the structural properties of the deposited films. The resultant phases and structures of the deposited films depended on both the growth temperature and the substrate surface properties (surface imperfections, steps, etc.). At the growth temperature of 800 °C, single-crystal rutile films were obtained reproducibly with two possible epitaxial relationships. At lower temperatures (400 to 775 °C), the deposited films can be epitaxial or polycrystalline with highly oriented grains. The similarity between the atomic arrangements of the substrate and the film is discussed in detail to explain the observed epitaxial relationships and abruptness of the interfaces.