Abstract
Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
54 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献