Microstructure of LaB6-base thick film resistors

Author:

Li Z.G.,Carcia P.F.,Donohue P.C.

Abstract

The microstructure of LaB6-base thick film resistors was investigated by cross-sectional transmission electron microscopy. The specimens were prepared by a technique that polished them to a thin wedge, thus avoiding ion-milling and permitting imaging over a distance of tens of microns. The resistor microstructure contained a finely divided electrically conductive phase of TaB2 and nonconducting crystals of CaTa4O11, formed during high temperature processing of glass and LaB6 ingredients of the thick film ink. Using higher surface area ingredients virtually suppressed the formation of CaTa4O11 crystals, and the microstructure became more uniform. Resistors made with higher surface area intermediates also had better voltage withstanding properties.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Microstructural Characterization and Performance Measurements;Organic Light-Emitting Materials and Devices, Second Edition;2015-05-29

2. Laser processing of LaB6-based thick film resistors;Powder Metallurgy and Metal Ceramics;2008-05

3. Structure and properties of resistive thick films after laser treatment;Materials Science;2007-11

4. CHEMICAL VAPOR DEPOSITION OF METAL BORIDES;Journal of Physics and Chemistry of Solids;1998-08

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