Fabrication of Cofired ALN Multilayer Substrates at Low Temperature Sintering

Author:

Terao Koichi,Uchiyama Ichiro,Hamano Akihiro

Abstract

AbstractIn order to lower the firing temperature of W cofired AlN multilayer substrates, sinterabilities of AlN substrate material and W conductor were investigated at low sintering temperatures around 1650 •C.In case of AIN substrate material, the effect of AIN powder properties on sinterability and thermal conductivity was evaluated. The powders, with specific surface area between 2.3 and 8.2m2• g−1 and oxygen content between 0.7 and 3.2 wt%, were sintered with CaO and Y2O3 as sintering additives. The finer powder promoted the densification below 1600°C and each powder was fully densified at 1650°C. However thermal conductivity sintered at 1650°C decreased with decreasing particle size due to increasing oxygen content inside AlN grains. The thermal conductivity of optimized AlN substrate sintered at 1650°C had over 100W • m−1 K−1.W conductor is required dense microstructure for high adhesion strength to AlN substrate. Shrinkage mismatch between AlN and W during sintering caused porous microstructure for coarse W powders or detaching for fine W powders. The optimized W paste was developed for low temperature sintering.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Spark plasma sintering of Sm2O3-doped aluminum nitride;Journal of the European Ceramic Society;2005-05

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