Metalorganic Magnetron Sputter Deposition of In1-xGax on (100)GaAs

Abstract

AbstractThis work reports for the first time, the epitaxial deposition of ln1-xGaxSb on (100)GaAs by Metalorganic Magnetron Sputtering. High quality films could be deposited on GaAs over the entire compositional range despite the large lattice mismatch between the film and substrate (14.6% for InSb and 7.8% for GaSb). The composition of the layers was found to be directly related to the trimethylgallium and trimethylindium fluxes at constant growth temperature. Growth rates of 1 µm/hr for the GaSb and 3 µm/hr for the InSb were observed.