Author:
Pugar Eloise A.,Morgan Peter E.D.
Abstract
ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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