Author:
Ibbetson J. P.,Yin L.-W.,Hashemi M.,Gossard A. C.,Mishra U. K.
Abstract
ABSTRACTSince epilayers of GaAs grown at low substrate temperature (LTGaAs) and annealed at 600°C were first demonstrated to be an effective buffer layer for eliminating backgating effects, the material properties and electronic characteristics of bulk LTGaAs have been actively investigated. Less attention has been paid to thin layers of LTGaAs (∼2000Å), although these have been shown to improve gate-to-drain breakdown characteristics when incorporated as the surface insulator layer in GaAs MISFET's. In bulk LTGaAs that has been annealed for 10 minutes at 600°C, the formation of arsenic precipitates with a density of 1018 cm-3 has been observed. These are considered to be at least partially responsible for the high resistivity of LTGaAs2. While the exact mechanism of precipitate formation is currently unknown, it would seem reasonable to expect the availability of the growth surface to have a significant effect on any defect redistribution during the anneal. This surface effect would become increasingly apparent as the LTGaAs layer thickness was decreased. It is desirable for MISFET applications that the LTGaAs gate insulator layer be as thin as possible, whilst maintaining high breakdown, in order to maximize device transconductance. To achieve this, it is important to understand how the observed bulk features (such as ∼60Å size arsenic precipitates) are affected in thin LTGaAs layers
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. 6. Ibbetson J.P. , Yin L.-W. , Hashemi M. , Gossard A.C. , and Mishra U.K. , submitted to Appl. Phys. Lett.
2. New MBE buffer used to eliminate backgating in GaAs MESFETs
3. 5. Yin L.-W. , Ibbetson J. , Hashemi M.M. , Jiang W. , Hu S.-Y. , Gossard A.C. , and Mishra U.K. , presented at the 1991 Mat. Res. Soc. Fall Meeting, symposium F, Boston, MA, 1991.
4. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献