Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP After Rapid Thermal Annealing

Abstract

ABSTRACTWe have studied in some detail the activation of implanted Si and Mg ions in InAs, GaSb and GaP after rapid thermal annealing. Even at doses of 1015 cm−2, the activation percentage of Mg is relatively high after optimum anneals -80% in GaP, 55% in GaSb and 45% in InAs. There is considerable outdiffusion of Mg in all three semiconductors for extended heat treatments. The amphoteric species Si shows good activation (60% for 1015 cm−2 dose) in InAs, a saturation electrically active concentration of ∼3 × 1013 cm−2 in GaP, and very low electrical activity in GaSb. The regrowth and damage removal characteristics in the three materials are similar to those of GaAs and InP.