Hole or Electron Doped C60Polymer Using Free Electron Laser Irradiation

Abstract

ABSTRACTPolymerized C60 crystals were grown using the free electron laser (FEL) irradiation. In order to promote the polymerization degree, hole or electron was doped in the C60 crystals grown by the liquid-liquid interfacial precipitation (LLIP) method to eliminate the degradation by oxidation. The specimen grown with the I2 dissolved butylalcohol (BTA, CH3(CH2)3OH) and the C60 saturationo-xylene solution, subsequently pressed at 7GPa, showed only Ag(2)-derived mode at 1456 cm-1 after the FEL irradiation. The specimen belonged to so-calledFphase, which is not obtained by the typical photo-induced polymerization process. It was noted that the FEL irradiation for polymerization of C60 was quite useful.