Author:
Feng W.,Rajanna G.,Sohal S.,Nikishin S. A.,Bernussi A. A.,Holtz M.
Abstract
ABSTRACTOptical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.
Publisher
Springer Science and Business Media LLC