Author:
Luo Chong,Li Juan,Li He,Meng Zhiguo,Huang Qian,Xu Shengzhi,Sing Kwok Hoi,Xiong Shaozhen
Abstract
ABSTRACTA technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.
Publisher
Springer Science and Business Media LLC