Author:
Kato Yukako,Umezawa Hitoshi,Yamaguchi Hirotaka,Teraji Tokuyuki,Shikata Shin-ichi
Abstract
ABSTRACTSemiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of mixed dislocations is observed by the analysis by using the birefringence image, cathodoluminescence image and x-ray topography.
Publisher
Springer Science and Business Media LLC