Incubation Time Free CVD-TiO2 Film Preparation Using Novel Precursor of Ti-DOT

Abstract

ABSTRACTTitanium oxide thin films were deposited at 250 – 400 °C on amorphous SiO2 prepared on n-type Si substrates by chemical vapor deposition (CVD) using a novel precursor, ethene-1,2-diylbis(tert-butylaminido)diisopropoxotitanium [Ti[N(tBu)C=CN(tBu)](OiPr)2 , Ti-DOT], with oxygen gas as an oxidant. Deposition characteristics of thin films were compared with those using titanium tetraisopropoxide [Ti(OiPr)4, TTIP]. As a result, the deposition amount of TiO2 thin films using Ti-DOT was larger than that of TTIP because of the shorter incubation time in the case of Ti-DOT. Smaller surface roughness was observed for the films using Ti-DOT. In addition, a good conformability was obtained on amorphous SiO2 hole prepared on n-type Si substrate substrate with aspect ratio of 5.