Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport-Reference-Cited by-同舟云学术

Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

Published:2004 Issue: Volume:815 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Yoganathan M.,Gupta A.,Semenas E.,Emorhokpor E.,Martin C.,Kerr T.,Zwieback I,Souzis A. E.,Anderson T.A.,Tanner C.D.,Chen J.,Barrett D.L.,Hopkins R.H.,Johnson C.J.,Yan Fei,Choyke W.J.,Devaty R.P.

Abstract

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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