Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

Author:

Park Nae-Man,Kim Tae-Soo,Choi Chel-Jong,Seong Tae-Yeon,Park Seong-Ju

Abstract

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Size Effects in Amorphous Nanosolids;Key Engineering Materials;2010-07

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