A Tentative Identification of the Nature of {113} Stacking Faults in Si – Model and Experiment

Abstract

ABSTRACTAn atomic model with fully bonded interstitial atoms is proposed for the {113} stacking faults (SF). It is shown that the development of the {113} habit plane is a result of minimizing bond length changes. The fault may be represented by a partial dislocation and a partial will facilitate an unfaulting reaction to result in a edge dislocation. Lattice images were obtained for a {113} SF which showed that the model is essentially correct.