Statistical Phonon Transport Model of Thermal Transport in Silicon

Abstract

AbstractThermal transport in crystalline materials at various length scales can be modeled by the Boltzmann transport equation (BTE). A statistical phonon transport (SPT) model is presented that solves the BTE in a statistical framework that incorporates a unique state-based phonon transport methodology. Anisotropy of the first Brillouin zone (BZ) is captured by utilizing directionally-dependent dispersion curves obtained from lattice dynamics calculations. A rigorous implementation of phonon energy and pseudo-momentum conservation is implemented in the ballistic thermal transport regime for a homogeneous silicon nanowire with adiabatic specular boundary conditions.