Diamond Forming Discharges

Abstract

AbstractMethods to prepare diamond thin films by means plasma chemical vapor deposition are reviewed. The various techniques available to date are compared with respect to their deposition rates, deposition area, quality and homogeneity of the material produced, and their specific advantages and drawbacks. The deposition rates of both thermally induced and plasma induced CVD methods correlate well with the gas temperature in the reaction zone supporting the hypothesis that the large quantities of diamond precursor species necessary for high deposition rates are formed in a hot spot of the deposition system.