Raman and optical absorption studies of silicon carbide structure damage by ion implantation

Abstract

AbstractThe work reported here deals with studying the defects induced by heavy ion implantation as well as the degree of crystalline lattice recovery after annealing in a high purity argon environment between 600 and 1600 °C. We implanted 6H, n-type silicon carbide with Pd and Au ions at 1015 ions/cm2, and used Micro-Raman (MR) and optical absorption (OA) spectroscopy techniques for investigating the lattice properties and damage evolution at various stages during the fabrication process.