Influence of Ion-Implantation on Characteristics of Picosecond Photoconductive Switches

Abstract

ABSTRACTIon-implantation induced amorphization has been used to modify the linearity of response of ultrafast photoconductive switches fabricated on SOS. The extent of amorphization was determined using various materials characterization techniques. TRIM-86 Monte Carlo calculations were used to model the defect densities produced by ion implantation. Linearity of response is critically dependent upon the nature of the semiconductor region under metallic contacts and the character of the response is opposite to that expected from reports in the literature.