Configurational Relaxation of the D Defect in Hydrogenated Amorphous Silicon as a Function of Fermi Energy

Author:

Leen Thomas M.,Rasmussen Randall J.,Cohen J. David

Abstract

ABSTRACTBy using light soaking and partial dark annealing to vary the Fermi level in n-type a-Si:H, we have examined the thermal emission of electrons from the dangling bond (D) defect. We find optical evidence for a change in the configuration of the D defect when EF = Ec-0.55±0.08eV. We find that the relaxation rate increases with temperature and increases as EF is brought closer to Ec. Voltage-pulse photocapacitance and depletion-width-modulated ESR show emission is predominantly from D° defects for short emission times and short filling pulse widths. With longer emission times and longer filling pulse widths, emission from D-dominates. We also find that the charge emission transient fits a universal scaling law under a variety of pulsing conditions, temperatures, and anneal states.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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