Author:
Morin P.A.,Wang N.W.,Wagner S.
Abstract
ABSTRACTWe report the deposition parameters for optimized a-Si,Ge:H,F alloys in the range of optical (Taue) gap of 1.22eV to 1.65eV. These deposition parameters were optimized using the photosensitivity and initial defect density as figures of merit. We observe two distinct regimes of film growth rate, dependent on the choice of source gases. Growth from fluoride source gases results in a growth rate of less than 0.6 Ås--1. Growth from a mixture of fluorides and silane gives a range of growth rates from 2 Ås-l to 5.5Ås1. Alloys in both regimes display the low defect densities and the high photosensitivities required for devices.
Publisher
Springer Science and Business Media LLC
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