Optimization of Storage Spatial Light Modulators Incorporating Amorphous Silicon as Photoconductor

Abstract

ABSTRACTThe behavior of a-Si.H photoconductors under conditions used in storage photoaddressed spatial light modulators (PASLM) is described. The differences observed in high and lov voltage operation are explained in terms of charge collection efficiency. A voltage dependent resistance term is proposed for PASLM modelling. The effects of photocapacitance are assessed and found to be of significance only under conditions of low drive voltage and higher illumination levels.