Abstract
AbstractThe clean room processing, firing and crystal growth techniques required to produce high-purity Al2O3 crystals and bicrystals with [2110] tilt boundaries near low Σ misorientations are described. The chemical analysis requirements for high-purity ceramic materials are discussed. The boundary characteristics of the θ=33.2°, near Σ = 11, misorientation and the applicability of the CSL model to describe the observed facet planes is determined. The periodicity of the dislocations present in the boundary is 21 nm. STEM analysis of the grain boundary region indicates no second phase or detectable impurity concentrations. The importance of gra in boundary structure investigations in high-purity materials and of chemically well-characterized boundaries is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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