Author:
Kuan H.,Shei S.C.,Tzou W.J.,Su Y. K.
Abstract
ABSTRACTThe GaInP-GaAs single quantum well structures grown by metal-organic chemical vapor deposition (MOCVD) were investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The built-in electric field in the GaAs close to the top surface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps and broadening parameters were also determined. The full width at half maximum (FWHM) of the GaInP PL peak is 11 meV
Publisher
Springer Science and Business Media LLC