Laser Assisted Molecular Beam Deposition of Si, C and Sic Films

Abstract

AbstractLaser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.