Author:
Ascheron C.,Krause R.,Polity A.,Sobotta H.,Riede V.
Abstract
ABSTRACTIn proton-bombarded InP single crystals the fluence-dependent production of vacancy-type radiation defects and their annealing behaviour are studied. The results are interpreted using measurements of the total defect concentration, the carrier concentration and the infrared absorption.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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