Silicides for the 65 nm Technology Node

Author:

Besser Paul R.,Chan Simon,Paton Eric,Kammler Thorsten,Brown David,King Paul,Pressley Laura

Abstract

AbstractAt the 65 nm node, silicide faces formidable challenges. Co is the current process of record for most integrated circuit manufacturers and thus becomes baseline silicide for 65 nm. However, Ni is the likely replacement. Both silicides are challenged to meet the requirements at the 65 nm node. This manuscript reviews the current CoSi2challenges (dopant interactions, Ge interactions, linewidth extendibility, impurity effects, agglomeration issues, etc). Ni consumes less Si but has its own challenges, including issues with contact leakage and thermal budget, excessive diffusion and oxidation, interactions with dopant and impurities. Both silicides have formation and stability issues in the presence of Ge. Additions of Ge increase the temperature at which a low resistance CoSi2is formed due to film segregation into CoSi2and Ge-rich Si-Ge grains. With Ni, additions of Ge decrease the temperature at which NiSi converts to a NiSi2, lead to agglomeration at a lower temperature and lead to germanosilicide formation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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3. Dependence of Sheet Resistance of CoSi2with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process;Japanese Journal of Applied Physics;2007-11-06

4. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

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