Fast Simulation Tool For MOS/SOI Process Optimization

Abstract

AbstractA fast simulation tool for MOS/SOI process optimization has been developed.lt solves Poisson's and one carrier current density equations in the one-dimensional case. NMOS and PMOS transistors characteristics in the linear region are reliably computed over a wide range of voltages. Moreover, special attention has been paid for threshold voltage (calculated by extrapolating the inversion charge as a function of front gate voltage ) and subthreshold current calculation. Therefore, process parameters can be easily selected in order to get enhanced device capabilities.