INTERFACIAL DEFECTS AND EPITAXY-Reference-Cited by-同舟云学术

INTERFACIAL DEFECTS AND EPITAXY

Published:1985 Issue: Volume:56 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

POND R.C.

Abstract

AbstractIt is shown that interfacial defects are characterised by combinations of symmetry operations, one from each of the adjacent crystals. This approach demonstrates that the variety of possible interfacial defects is broader than had been previously recognised, and includes disclinations and dispirations in addition to dislocations. The condition of the initial substrate surface is shown to have a very important influence on the character and stability of interfacial defects.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. 13. Pond R.C. , McAuley N. and Devenish R.W. , 1985, Inst. Phys. Conf. Ser. 76, 67.

2. 6.International Tables for Crystallography, 1983, D. Reidel Pub. Co., Boston.

3. 18. Eaglesham D.J. and Kiely C.J. , 1985, Proc. E.M.A.G., Inst. of Physics, London.

4. The growth of spinel into AI2O3

5. 11. Bartha J.W. and Henzler M. , 1985, Surf. Sci., in press.

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