DEFECTS IN GaAs GROWN ON Ge SUBSTRATES-Reference-Cited by-同舟云学术

DEFECTS IN GaAs GROWN ON Ge SUBSTRATES

Published:1985 Issue: Volume:56 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

CARTER C. B.,COOMAN B.C. DE,CHO N.H.,FLETCHER R.M.,WAGNER D.K.,BALLANTYNE J.

Abstract

AbstractThe growth of polar semiconducting materials on non-polar semiconducting substrates is illustrated by experimental observations of GaAs grown on Ge substrates and on Ge epilayers which had been grown on Si substrates. The GaAs epilayers are grown in each case by metal-organic, vapor-phase deposition. The GaAs/Ge heterophase junction, the grain boundaries in GaAs grown on {110} Ge and on {001} Ge/Si composit substrates and the anti-phase boundaries in GaAs grown on {001} Ge substrates are eat.h illustated. The interfaces have been studied by transmission electron microscopy and reveal the pronounced faceting of the anti-phase boundaries in GaAs. Also demonstrated experimentally is the strong interaction between dislocations/grain boundaries and these anti-phase boundaries.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

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