TEM and SEM Studies of Multiple Silicon on Insulator Films for Three Dimensional Circuits.

Abstract

AbstractMultiple layers of silicon on insulator have been recrystallized using a dual electron beam technique. The aim of the investigations was to produce structures suitable for three dimensional circuit applications, and so a number of strategies have been used, providing a range of opportunities for such applications. In particular, two layers of silicon on insulator have been recrystallized simultaneously, and also a second layer has been recrystallized, seeded from a previously regrown film.