Modeling and Experiments of Dopant Diffusion and Defects for Laser annealed Junctions and advanced USJ-Reference-Cited by-同舟云学术

Modeling and Experiments of Dopant Diffusion and Defects for Laser annealed Junctions and advanced USJ

Published:2008 Issue: Volume:1070 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Noda Taiji,Vandervorst Wilfried,Felch Susan,Parihar Vijay,Vrancken Christa,Hoffmann Thomas Y.

Abstract

ABSTRACTLaser annealed junctions and advanced ultra shallow junctions are studied in both atomistic modeling and experiments. SIMS and sheet resistance measurement for spike-RTA + Laser annealing show that additional laser annealing after spike-RTA (“+Laser”) improve the dopant activation level without increasing in junction depth. “+Laser” effect become effective in the combination of low spike-RTA temperature and high laser temperature. This effect is significant for As doped layer. Spike-RTA based junction has a limitation in viewpoint of Rs-Xj trade-off. Laser-only annealing is promising candidate to overcome this limitation. Boron diffusion with laser-only annealing is investigated. As atomistic kinetic Monte Carlo modeling show that BnImcomplexes and End-of-Range (EOR) defects are formed during sub-millisecond annealing time range. Impact of F co-implant on Boron diffusion and EOR defect evolution during sub-millisecond annealing are also investigated.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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