Buried Oxide Soi: Materials, Devices, and VLSI Circuits

Abstract

AbstractIn the past couple of years, buried oxide SOI has emerged as the leading SOI approach. Significant advances have been made in the understanding and the preparation of the buried oxide substrates. Various VLSI circuits have been demonstrated with excellent results, proving the maturity and the manufacturability of this technology. In this paper, buried oxide material properties, device parameters and the implementation of a 2.5 urn 4K SRAM and a 1.25 pm 16K SRAM on the buried oxide substrates are reviewed.