Author:
De Avillez R. R.,Clevenger L. A.,Thompson C. V.
Abstract
Power compensated differential scanning calorimetry, transmission electron microscopy, and density measurements were used to characterize relaxation phenomena associated with structural transitions in electron beam evaporated amorphous silicon thin films. Two transitions were observed in the amorphous films upon heating: a broad exothermic process below 600 K and an endothermic step beginning at 600 K. The broad exothermic process is due to the relief of bond distortions. The endothermic step is related to homogenization and densification of the structure of the amorphous silicon.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献