Segregation and Diffusion of Sb Compared to as for Ultra-Shallow Implantation Into Silicon

Abstract

AbstractWe investigate diffusion and segregation of Sb and As after low energy implantation and annealing. Sb implantation profiles are significantly more stable against segregation for implantation energies higher than 5 keV compared to As. For ultra-shallow profiles and annealing temperatures above 850°C we demonstrate strong Sb and As segregation up to 1021 cm–3 in an interfacial layer less than 3 nm. In comparison to As antimony profiles show reduced tails mainly due to less sensitivity for excess Si self-interstitial effects generated both during implantation defect anneal and during deactivation of heavily n-doped regions by clustering.