Enhanced electroluminescence performance of all-inorganic quantum dot light-emitting diodes: A promising candidate for hole transport layer of Cu-doped NiO nanocrystals-Reference-Cited by-同舟云学术

Enhanced electroluminescence performance of all-inorganic quantum dot light-emitting diodes: A promising candidate for hole transport layer of Cu-doped NiO nanocrystals

Published:2019-04-29 Issue:16 Volume:34 Page:2757-2764
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Zhang Yi-Dong^ORCID,Zhao Lei

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Solution-processed quantum dot light-emitting diodes with PANI:PSS hole-transport interlayers

2. Conductivity Enhancement of Nickel Oxide by Copper Cation Codoping for Hybrid Organic-Inorganic Light-Emitting Diodes

3. High-Performance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution-Processed Copper-Doped Nickel Oxide Hole-Transporting Layer

4. Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition

5. Optical and electrochemical properties of Cu-doped NiO films prepared by electrochemical deposition

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