Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures

Abstract

ABSTRACTWe have studied thermal stability of Nb and NbN contacts to GaAs and GaN by x-ray diffraction and SIMS, and demonstrated their excellent behaviour under high temperature annealing. GaAs/Nb and GaAs/NbN contacts are stable up to 800°C and 900°C, respectively while GaN/NbN and GaN/Nb/NbN remain stable up to 1000°C.