Electron Stimulated Desorption of Deuterium from GaN (0001) Surface

Abstract

AbstractTemperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons. TPD of the deuterated surface without electron exposure shows a broad D2 desorption feature with a peak desorption temperature at ∼400 °C. Electron exposure results in a decrease in intensity of the desorption peak which is attributed to removal of surface deuterium by electron stimulated desorption (ESD). This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombinative desorption is first order in deuterium coverage.