Author:
Thompson Michael O.,Galvin G. J.
Abstract
ABSTRACTThe transient conductance technique has been used in a detailed study of the liquid-solid interface dynamics during pulsed laser melting of Si and silicon-on-sapphire. Average melt and regrowth velocities, as well as the maximum melt depth, can be obtained with the technique. The measurements are found to agree well with a computer simulation based on a thermal model of the melt and subsequent solidification. The melt-in velocity has been observed to exceed 200 m/sec. Under 2.5 ns UV irradiation, the critical velocity for amorphization of <100> Si has been measured at 15 m/sec.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
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