Time Resolved Measurements of Interface Dynamics During Pulsed Laser Melting Observed by Transient Conductance

Author:

Thompson Michael O.,Galvin G. J.

Abstract

ABSTRACTThe transient conductance technique has been used in a detailed study of the liquid-solid interface dynamics during pulsed laser melting of Si and silicon-on-sapphire. Average melt and regrowth velocities, as well as the maximum melt depth, can be obtained with the technique. The measurements are found to agree well with a computer simulation based on a thermal model of the melt and subsequent solidification. The melt-in velocity has been observed to exceed 200 m/sec. Under 2.5 ns UV irradiation, the critical velocity for amorphization of <100> Si has been measured at 15 m/sec.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference24 articles.

1. Liquid Semiconductors

2. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing

3. 5. Galvin G. J. , Thompson Michael O. , Mayer J. W. , Peercy P. S. , Hammond R. B. and Paulter N. , to be published Phys. Rev. B. (Jan. 1983).

4. A melting model for pulsing‐laser annealing of implanted semiconductors

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