Abstract
AbstractRecent experiments dealing with the thermodynamics of crystallization and melting of amorphous Si are reviewed. differential scanning calorimetry measurements give the heat of crystallization of implanted, amorphous Si to be 11.3±t.8 kJ/mole. Gibbs free energy calculation based on these measurements indicate that amorphous Si melts at a temperature of 1460°K compared to the crystalline value of 1685°K. Evidence for this reduced melting temperature also comes from rapid heating measurements using a) structural information after solidification and b) dynamic conductance measurements during the melt. Solid phase epitaxial regrowth experiments which apparently do not show such a depression in amorphous melting temperature will be discussed.
Publisher
Springer Science and Business Media LLC
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