Modelling Diffusion in and From Polysilicon Layers

Abstract

AbstractThe physical processes involved in dopant redistribution during heat treatments of polysilicon layers are described, and one and two—dimensional models based on these are presented. The quantitative effects of the physical parameters determining arsenic andboron distributions in bipolar VLSI emitter—base structures are demonstrated, andclose correspondence shown with available experimental data. Areas needing new models are outlined, and an approach to the modelling of epitaxial alignment is proposed.