Low Stress Silicon Nitride and Polysilicon Films for Micromachining Applications-Reference-Cited by-同舟云学术

Low Stress Silicon Nitride and Polysilicon Films for Micromachining Applications

Published:1990 Issue: Volume:182 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Beck P. A.,Taylor S. M.,Mcvittie J. P.,Ahn S. T.

Abstract

AbstractReduced stress silicon nitride and undoped, as deposited, polysilicon films have been characterized on a variety of silicon based substrates within the confines of co-fabrication compatibility of micromechanical structures with VLSI processing. Average stress and stress uniformity through the films are shown to vary with substrate parameters.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference18 articles.

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3. 8. Ahn S. T. , Ph.D. thesis, Stanford University, 1989.

4. Integrated fabrication of polysilicon mechanisms

5. 16. Lober T. , “Characterization of the Mechanisms Producing Bending Moments in Polysilicon Micro-Cantilever Beams by Interferometric Deflection Measurements,”IEEE Solid-State Sensor and Actuator Workshop 1988, pp.92–95.

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