Author:
Schowalter L.J.,Shusterman Y.,Wang R.,Bhat I.,Arunmozhi G.,Slack G.A.
Abstract
High quality, epitaxial growth of AlN and AlxGa1−xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [100] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
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