Author:
Chyi Jen-Inn,Lee C. -M.,Chuo C.C.,Chi G. C.,Dang G. T.,Zhang A. P.,Ren Fan,Cao X.A.,Pearton S.J.,Chu S. N. G.,Wilson R. G.
Abstract
Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
18 articles.
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