Author:
Gallagher Dennis,Scanlan Francis,Houriet Raymond,Mathieu Hans Jörg,Ring Terry A.
Abstract
In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
1. X‐ray photoemission spectroscopy studies of Sn‐doped indium‐oxide films
2. Tin and germanium .beta.-diketonate complexes. I. Stereochemistry, configurational rearrangements, and vibrational spectra of dihalobis(acetylcetonato)tin(IV) complexes
3. 9Omicron Spectrometer, Kevex Instruments, San Carlos, CA 94070.
4. 4 Arfsten N. J. , Kaufman R. , and Dislich H. , German Patent DE 3300589, July 12, 1984.
5. 10SFM-BD2-210, Park Scientific Instruments, Mountain View, CA 94043.
Cited by
44 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献