Modeling of diamond growth from a microwave plasma: C2H as growth species

Abstract

Diamond growth experiments were performed in a microwave plasma ball reactor on silicon wafers or on a molybdenum sheet provided with cones (stamped into the sheet with a punch). All substrates had been treated by scratching with diamond powder in advance. The gas mixture used was CH4/H2, sometimes with the addition of CO. Substrate temperatures ranged from 953 to 1428 K, pressures from 100 to 400 mbar, and microwave powers from 250 to 700 W. A strong preference of diamond growth was observed on the cones in the molybdenum substrates. This is interpreted as being caused by gas transport hindrance. The resulting deposition coefficient of the “active” species is about 0.1 under all conditions investigated. The deposition experiments on silicon substrates are numerically modeled in two steps. In the first step, temperature fields and electron density and energy distributions in pure hydrogen are calculated following the method described previously. The output of this first simulation step is taken as input data for the second step. The condition is applied that chemical reaction rates due to thermal or electronic activation and diffusional flows compensate each other at every point of the reactor. In this way stationary concentrations of the 13 species in 29 elementary reactions are computed and, from these, the expected deposition profile of diamond on the silicon substrate, assuming one of the carbon-containing species to be the “active” one. When the experimental deposition profiles are compared with the calculated ones, C2H as the “active” species gives the best match to all the experimental results. CH3 and C2H2 (and perhaps others) might contribute to the diamond growth to a limited extent only.