Abstract
Filament formation in V2O5 gel films leading to a two-terminal switching device has been observed. In a previous paper, we have identified the switching with a metal-insulator transition within a permanent, current-induced channel between the electrical contacts. Here, we describe the reversible formation of a filament inside the channel, and obtain a static solution of the heat transport equation for this device which indicates a large temperature variation within the filament, and further reveals the failure mechanism for the reversible switching. The principle of least entropy production has been used to analyze the filament growth, which results in a successful simulation of the “on” state I-V characteristic of the switching process, including its negative resistance region.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. 17The I-V characteristic shown in Fig. 2 is for a device with geometry shown in Fig. 1. A diamond scribe was used to scratch two thin lines across the film, perpendicular to the VO2+x channel. These lines (not shown in the figure) interrupted any small electrical current flowing in parallel with the channel. These scratches in the film did not affect significantly the I-V characteristic of the device, indicating that most (if not all) device current flows in the VO2+X channel.
Cited by
6 articles.
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